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| MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 270 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 6.8 W, non repetitive VGE = 15 V, TJ = 125C, RG = 6.8 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 270 180 360 10 ICM = 360 VCEK < VCES 1130 150 -40 ... +150 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 V V V V A A A ms A Advantages W q Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits Typical Applications q q Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 030 MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 15 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 6 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 150 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 10 mA mA 700 nA 2.2 11 1.5 0.65 100 50 650 50 24.2 21 0.22 2.7 V nF nF nF ns ns ns ns mJ mJ Inductive load, TJ = 125C IC = 150 A, VGE = 15 V VCE = 600 V, RG = 6.8 W with heatsink compound 0.11 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.2 1.8 2.5 1.9 300 200 125 200 0.45 V V A A A ns 0.23 K/W K/W Conduction VF IF IRM trr RthJC RthJS IF = 150 A, VGE = 0 V, IF = 150 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 150 A, VGE = 0 V, -diF/dt = 1200 A/ms TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 7.0 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 3.4 mW Thermal Response IGBT (typ.) Cth1 = 0.40 J/K; Rth1 = 0.110 K/W Cth2 = 0.93 J/K; Rth2 = 0.003 K/W Free Wheeling Diode (typ.) Cth1 = 0.28 J/K; Rth1 = 0.226 K/W Cth2 = 0.51 J/K; Rth2 = 0.005 K/W (c) 2000 IXYS All rights reserved 2-4 MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 350 A 300 IC 250 TJ = 25C VGE=17V 15V 13V 11V 350 TJ = 125C A 300 IC 250 200 150 VGE=17V 15V 13V 11V 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 9V 100 50 0 0.0 9V 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 350 VCE = 20V A 300 IC 250 TJ = 25C 600 A 500 IF 400 300 TJ = 125C TJ = 25C 200 150 100 50 0 5 6 7 8 9 10 VGE 200 100 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 100 20 V VGE 15 250 trr VCE = 600V IC = 150A A ns 80 IRM 200 150 100 IRM TJ = 125C VR = 600V IF = 150A 200-12 trr 60 10 40 5 20 0 0 200 400 600 QG 50 0 0 800 nC 0 200 400 A/ms 600 800 -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 90 mJ Eon td(on) tr 120 ns 80 Eon VCE = 600V VGE = 15V RG = 6.8W TJ = 125C 80 mJ t Eoff 60 td(off) 800 ns 600 t Eoff 400 VCE = 600V VGE = 15V 60 40 40 30 20 RG = 6.8W TJ = 125C 200 0 0 100 200 IC 0 0 0 100 200 IC tf 300 A 0 300 A Fig. 7 Typ. turn on energy and switching times versus collector current 50 mJ 200 ns 160 t 120 tr 80 40 0 28 Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 50 mJ 2000 VCE = 600V VGE = 15V IC = 150A TJ = 125C 40 Eon VCE = 600V VGE = 15V IC = 150A TJ = 125C td(on) Eon 40 30 20 10 0 0 td(off) ns 1600 t 1200 800 400 30 20 10 0 0 4 8 12 16 RG Eoff 20 24 W 4 8 12 16 RG 20 24 W 28 tf 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 400 A ICM 300 RG = 6.8W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC 0.01 0.001 0.0001 diode IGBT 200 100 single pulse 200-12 0 0 200 400 600 800 1000 1200 V VCE 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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